| PART |
Description |
Maker |
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors
|
ON Semiconductor
http://
|
| MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount
Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR
Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http://
ONSEMI[ON Semiconductor]
|
| 2N6488 |
Complementary Silicon Plastic Power Transistor(15A5W0V（集电极-发射极），补偿型，硅NPN功率晶体 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
ON Semiconductor
|
| MJ14001 MJ14003 MJ14002 ON1978 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| CZT31C |
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR 3 A, 100 V, NPN, Si, POWER TRANSISTOR
|
Central Semiconductor, Corp.
|
| NTE262 NTE261 |
Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| CJD340 CJD350 |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
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