| PART |
Description |
Maker |
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDY10S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH02SG120 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDB10S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG Infineon Technologies A...
|
| IDT10S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDD09SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC06S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
| IDV02S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|