| PART |
Description |
Maker |
| IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDD10SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH12SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT04S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT04S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC05S60CE |
2nd generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDD12SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH10SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|