| PART |
Description |
Maker |
| AOK27S60L |
600V 27A a MOS
|
Alpha & Omega Semicondu...
|
| APT8030 APT8030B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 27A 0.300 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N6 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|
| HGTG12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT6045CVR APT5024BVFR |
POWER MOS V 600V 11.8A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6035 APT6035AVR |
POWER MOS V 600V 16A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6015LVR |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| IRG4PC40 IRG4PC40F IRG4PC40F-EPBF |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
