| PART |
Description |
Maker |
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| CPD80 |
Switch Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| KTX403U |
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BAS70-06S Q62702-A3469 BAS7006S |
From old datasheet system
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping)
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| NSVBAS21TMR6T1G NSVBAS21TMR6T2G |
High Voltage Switching Diode
|
ON Semiconductor
|
