| PART |
Description |
Maker |
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| CFRMT104-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=400V, V-R=400V, I-O=1A
|
Comchip Technology
|
| FMG-33S/R |
Ultra-Fast-Recovery Rectifier Diodes(- 400V) 超快速恢复整流二极管- 400V
|
Sanken Electric Co., Ltd.
|
| JANTXV2N6760 JANTX2N6760 IRF330 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
HEXFET? TRANSISTOR
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)
|
IRF[International Rectifier]
|
| 2SC3039 C3039 2SC3039M 2SC3039N |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
POWER TRANSISTORS(7.0A/400V/50W)
POWER TRANSISTORS(7.0A,400V,50W)
POWER TRANSISTORS(7.0A400V50W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW730 IRFW730B IRFI730B IRFW730BTM IRFW730BTMNL |
400V N-Channel B-FET / Substitute of IRFW730A
400V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR330 IRFR330B IRFU330B IRFU330BTU |
400V N-Channel B-FET / Substitute of IRFU330A
400V N-CHANNEL MOSFET
|
Fairchild Semiconductor
International Rectifier
http://
|
| APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
