| PART |
Description |
Maker |
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| SIDC14D60F6 SIDC14D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| BYW76GP BYW73GP BYW74GP BYW72GP BYW75GP |
Fast Recovery Pack: DO-201AD
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200 TO 600V CURRENT: 3.0A
|
Gulf Semiconductor
|
| STGW30NC60WD |
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH?/a> IGBT
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| UID4N60 |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower Technology Limited
|
| UT4N60F |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower
|
| SIDC03D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| STGE50NC60WD |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
|
STMicroelectronics
|
| 10N70-Q |
N-CHANNEL POWER MOSFE
|
Unisonic Technologies
|
| ES1A ES1B ES1C ES1D ES1G ES1J |
Super Fast Recovery Pack: SMA
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE拢潞50 TO 600V CURRENT拢潞 1.0A
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT 1.0A
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT?1.0A
|
Gulf Semiconductor
|
| IRG4BC30FD1 |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRF[International Rectifier]
|
