| PART |
Description |
Maker |
| BSS84P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-23, RDSon = 8
|
Infineon
|
| BSS159N BSS169N |
Low Voltage MOSFETs - Depletion MOSFET, 60V, SOT-23,RDSon = 8Ohm, 0.13A, NL SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| AT80C51SND1C AT83SND1C |
C51 Microcontroller with Embedded MP3 Decoder ROMless. MultiMediaCard, DataFlash®, SmartMedia, CompactFlash ... C51 Microcontroller with Embedded MP3 Decoder and 64 Kbytes ROM. MultiMediaCard, DataFlash®, SmartMedia, CompactFlash ...
|
Atmel
|
| STD16NF06L STD16NF06LT4 STD16NF06L-1 |
N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL 60V - 0.060 & - 16A DPAK STripFET II POWER MOSFET
|
ST Microelectronics
|
| CAT28C64BT13I-20 CAT28C64BNI-20 CAT28C64BKI-20 CAT |
SMARTi 3G - PMB 5701 Ultraframer DS3/E3/DS2/E2/DS1/E1/DS0 E-GOLD radio - PMB 7870; Package: SG-LF2BGA-233 SMARTi™ 3G - PMB 5701 x8的EEPROM 128Kx8 EEPROM 128Kx8 EEPROM
|
Infineon Technologies AG Advanced Analogic Technologies, Inc.
|
| UPD29F016LGZ-C12T-LJH UPD29F016LGZ-C15T-LJH UPD29F |
x8 Flash EEPROM X-GOLD 201 - PMB 8876; Package: SG-LF2BGA-293; X-GOLD 208 - PMB 8877; Package: SG-LF2BGA-313; X-GOLD 206 - PMB 8888 COSIC (Cordless Single Chip) x8闪存EEPROM X-GOLD™ 208 - PMB 8877; Package: SG-LF2BGA-313; x8闪存EEPROM
|
Bourns, Inc.
|
| CAT29F150N-12T CAT29F150T-20B CAT29F150T-20T CAT29 |
x8 Flash EEPROM MediaClock 27-MHz VCXO Clock Generator 13 Output, 3.3V SDRAM Buffer for Desktop PCs with 3 DIMMs 18 Output, 3.3V SDRAM Buffer for Desktop PCs with 4 DIMMs Low-Cost 3.3V Spread Aware Zero Delay Buffer 200-MHz Field Programmable Zero Delay Buffer Low-Cost 3.3V Zero Delay Buffer Failsafe 2.5V/ 3.3V Zero Delay Buffer MediaClock PDP Clock Generator MediaClock Multimedia Clock Generator MediaClock DTV, STB Clock Generator MediaClock™ 27-MHz VCXO Clock Generator x8闪存EEPROM 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs x8闪存EEPROM Low-Cost 3.3V Spread Aware™ Zero Delay Buffer
|
Cypress Semiconductor Corp. Alliance Semiconductor, Corp.
|
| CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 4-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管)
|
International Rectifier, Corp.
|
| SPP42N03S2L-13 SPB42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.6mOhm, 42A, LL
|
Infineon
|