| PART |
Description |
Maker |
| STB200NF04 STB200NF04-1 STB200NF04T4 STP200NF04 |
30V N-Channel PowerTrench MOSFET
120 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL 40V - 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
N-CHANNEL POWER MOSFET
N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET
120 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STP200NF04L STB200NF04L-1 B200NF04L P200NF04L STB2 |
120 A, 40 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STK401-140 STK400-010 STK400-020 STK400-030 STK400 |
Two-Channel AF Power Amplifier ( - Power Supply) 120 W 120 W Minimum, THD = 0.4%
|
SANYO[Sanyo Semicon Device]
|
| FDMA1027PT |
Dual P-Channel PowerTrench? MOSFET -20 V, -3 A, 120 mΩ
Dual P-Channel PowerTrench㈢ MOSFET -20 V, -3 A, 120 mヘ
|
Fairchild Semiconductor
|
| C9732DK-1111 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 × 120 mm
|
Hamamatsu Corporation
|
| NVMFS5832NLT1G NVMFS5832NLT3G |
40 V, 4.2 m, 120 A, Single N?Channel
|
ON Semiconductor
|
| PSMN2R0-60PS |
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 120 A, 60 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| MIXA80W1200TED |
120 A, 1200 V, N-CHANNEL IGBT
|
IXYS CORP
|
| EH3625TS-120.000M |
OSCILLATORS 25PPM 0 70 3.3V 4 120.000MHZ TS CMOS 5.0X3.2MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EH3525ETTTS-120.000M |
OSCILLATORS 25PPM -40 85 5.0V 4 120.000MHZ TS CMOS 5.0X3.2MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, HCMOS/TTL OUTPUT
|
Ecliptek, Corp.
|
|
