| PART |
Description |
Maker |
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| 2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE
General Purpose Medium Power Amplifier
|
Continental Device India Limited
|
| 2N5337X |
Bipolar NPN Device in a Hermetically sealed TO39
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-39
|
Seme LAB
|
| SCS217F |
0.1A , 80V Plastic-Encapsulated Switching Diode
|
SeCoS Halbleitertechnologie GmbH
|
| CDSV3-217-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
|
Comchip Technology
|
| MMBTA28-13-F MMBTA28-7-F MMBTA28-15 |
80V NPN DARLINGTON TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| 2SCR574D |
NPN 2.0A 80V Middle Power Transistor
|
Rohm
|
| 2N6491 |
Power 15A 80V Discrete NPN
|
ON Semiconductor
|
| BUV19 |
Trans GP BJT NPN 80V 50A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
| 2SD986 2SD985 2SD986L |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 1.5AI（丙）|26
NPN SILICON DARLINGTON POWER TRANSISTORS
|
NEC[NEC]
|
