| PART |
Description |
Maker |
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 2643005701 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643021801 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643000801 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2661000701 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| AP6970GN2-HF AP6970GN2-HF-14 |
Bottom Exposed DFN, Lower Profile
Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| CA3127E CA3127F CA3127H |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz.
|
General Electric Solid State
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge
17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| BAR61 BAR60 Q62702-A786 Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) SILICON, PIN DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
