| PART |
Description |
Maker |
| MGF0907B MGF0907B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0912A MGF0912A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0918A MGF0918A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0921A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0951P MGF0951P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
Fujitsu Media Devices Limited
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| MGF1601B-01 |
High-power GaAs FET
|
Mitsubishi Electric Sem...
|
| FLL21E135IX |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL1500IU-2C |
L-Band High Power GaAs FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
