| PART |
Description |
Maker |
| MGF0952P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0917A MGF0917A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0912A MGF0912A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0915A MGF0915A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF1601B MGF1601B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0951P MGF0951P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited Sumitomo Electric Industries, Ltd.
|
| FLL21E010MK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| MSC8004 |
HIGH POWER GaAs FET Transistor
|
ASI Advanced Semiconductor
|
| FLL810IQ-3C |
L-BAND HIGH POWER GAAS FET
|
Eudyna Devices Inc
|