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HBAT-540E-TR1 - High Performance Schottky Diode for Transient Suppression 高性能肖特基二极管瞬态抑

HBAT-540E-TR1_5375191.PDF Datasheet


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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Vishay Intertechnology, Inc.
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