| PART |
Description |
Maker |
| AOT10B60D |
600V, 10A Alpha IGBT with Diode
|
Alpha & Omega Semiconductors
|
| AOTF5B60D |
600V, 5A Alpha IGBT with Diode
|
Alpha & Omega Semicondu...
|
| STGP10NC60H P10NC60H |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH IGBT
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGD10NC60S |
10A - 600V Fast IGBT
|
ST Microelectronics
|
| STGP10NB60S |
N-CHANNEL 10A - 600V TO-220 POWERMESH IGBT
|
ST Microelectronics
|
| STGB10NC60KDT4 STGP10NC60KD STGF10NC60KD GB10NC60K |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| PS21963-A |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-4 PS21963-4A PS21963-4C PS21963-4W |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
