| PART |
Description |
Maker |
| IRFD9220 |
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-0.56A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
IRF[International Rectifier]
|
| SML-LX15YYC-RP-TR |
SINGLE COLOR LED, YELLOW, 3 mm LEAD FREE, SOT-23, 3 PIN
SOT-23 REPLACEMENT
|
Lumex, Inc.
LUMEX INC.
|
| VN2001L-TR1 |
Trans MOSFET N-CH 200V 0.56A 3-Pin TO-226AA T/R
|
Vishay Siliconix
|
| IRFU2405 IRFR2405 |
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A)
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?)
|
IRF[International Rectifier]
|
| 56NT-17 |
Phase Control Thyristors (Stud & Lead Type), 56A
|
Naina Semiconductor ltd...
|
| M1MA142WAT1 M1MA141WAT1 ON0325 M1MA141WAT1_D M1MA1 |
SC-70/SOT-323 PACKAGE SINGLE SILICON
SC-70/SOT-323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola Inc
|
| 7705201XX 77052032X 77052012X |
2k, U/D single, 6-bit NV, Rheostat, -40C to 125C, 5-SOT-23, T/R
5K,U /D Single, 6-it NV, Rheostat, -40C to 125C, 6-SOT-23, T/R 8通道模拟多路复用
|
Analog Devices, Inc.
|
| NTR2101P NTR2101PT1 |
Small Signal MOSFET 8.0V, 3.7A, Single P Channel, SOT23(8.0V, 3.7A双功率MOSFET) 小信号MOSFET 8.0V.7A，单P通道，SOT23封装8.0V.7A双功率MOSFET的）
Small Signal MOSFET -8 V, -3.7 A, Single P-Channel, SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 3700 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ON Semiconductor
|
| K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4 |
DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD
MOSFET N-CH 500V 48A SOT-227B
MOSFET N-CH 200V 180A SOT-227B
MOSFET N-CH 300V 130A SOT-227B
MOSFET N-CH 500V 64A SOT-227
MOSFET N-CH 70V 200A SOT-227B
|
http://
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
