| PART |
Description |
Maker |
| EMP25Q12A EMP25Q12B EMP25Q12C EMP25Q12D EMP25Q12M |
Programmable solated intelligent power module, a 25A, 1200V, three-phase inverter for 15kW industrial and servo motors
NPT IGBTs 25A, 1200V
|
International Rectifier
|
| LSL9R30120G2 ISL9R30120G2 ISL9R30120G2NL |
30A, 1200V STEALTH DIODE, TO247 PACKAGE
30A, 1200V Stealth⑩ Diode
ISL9R30120G2
30A, 1200V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PH30KD IRG4PH30 |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| HGT1S11N12 HGTG11N120CN HGT1S11N120CNS HGTP11N120C |
From old datasheet system
43A 1200V NPT Series N-Channel IGBT
43A/ 1200V/ NPT Series N-Channel IGBT
43A, 1200V, NPT Series N-Channel IGBT(43A, 1200V NPT系列N沟道绝缘栅双极型晶体 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HGTG30N120CN HGTG30N120D2 |
30A/ 1200V N-Channel IGBT
30A, 1200V N-Channel IGBT
75A 1200V NPT Series N-Channel IGBT
|
INTERSIL[Intersil Corporation]
http://
|
| ISL9R18120S3S ISL9R18120G2 ISL9R18120P2 ISL9R18120 |
18A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
18A, 1200V Stealth⑩ Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
|
IRF[International Rectifier]
|
| HGTP2N120BND HGT1S2N120BNDS HGT1S2N120BNDS9A |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N沟道绝缘栅双极型晶体
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 2 A, 1200 V, N-CHANNEL IGBT, TO-220AB
12 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| RURD4120S RURD4120 FN3641 |
4A/ 1200V Ultrafast Diodes
4A, 1200V Ultrafast Diodes
From old datasheet system
|
Intersil Corporation
|
| X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho
THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length /
Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62
Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
