| PART |
Description |
Maker |
| APT6013JFLL |
POWER MOS 7 600V 39A 0.130 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| IRGPC50F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A)
|
IRF[International Rectifier]
|
| APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6035 APT6035AVR |
POWER MOS V 600V 16A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6010JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
| APT6029BFLL APT6029SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 21A 0.290 Ohm
|
Advanced Power Technolo...
Advanced Power Technology
|
| 2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (600V, 4A)
|
ROHM
|
| 2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| AOWF7S60 AOW7S60 |
600V 7A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
