| PART |
Description |
Maker |
| SHM100UF |
50-250 mA 1500-14000 VOLTS 60-100 nsec HIGH VOLTAGE RECTIFIER 0.1 A, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
| SHM120UFSMS |
50-250 mA 1500-14000 VOLTS 60-100 Nsec HIGH VOLTAGE RECTIFIER 0.1 A, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
| SHM100SMS |
50-250 mA 1500-14000 VOLTS 200 usec HIGH VOLTAGE RECTIFIER 0.1 A, 10000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
| T7000425 T7002025 T7000225 T7001335 T7002235 T7000 |
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 1200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1800 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 2000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 600 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 第一阶段控制晶闸管（250-350安培200-2200伏特
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 2200 V, SCR
|
Powerex Power Semicondu...
Powerex Power Semiconductor...
PHOENIX CONTACT Deutschland GmbH
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
|
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| SMCJ6036 SMCJ6036A SMCJ6037 SMCJ6037A SMCJ6038 SMC |
CMOS Triple 3-Input NAND Gate 14-PDIP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
CMOS Dual 4-Input OR Gate 14-TSSOP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
CMOS Triple 3-Input NAND Gate 14-CDIP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
From old datasheet system
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 3403.0289.11 3403.0289.23 |
Surface Mount Fuse, 5.3 x 16 mm, Time-Lag T, 277 VAC / 250 VDC, Breaking Capacity 1500 A
|
Schurter Inc.
|
| SMCJ48A SMCJ12 SMCJ16 SMCJ160A SMCJ36A |
Transient Voltage Suppressor 5.0 to 170 Volts 1500 Watt
|
http://
Micro Commercial Compon...
|
| 1SMC6.5CA 1SMC8.0CA 1SMC5.0CA 1SMC6.0CA 1SMC7.0CA |
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电4V,双向玻璃钝化节点瞬变电压抑制 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.0V,双向玻璃钝化节点瞬变电压抑制 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电8V,双向玻璃钝化节点瞬变电压抑制 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,双向玻璃钝化节点瞬变电压抑制
STRAP BATTERY FIBRE BASE 9V 4LD
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.5V,双向玻璃钝化节点瞬变电压抑制
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS/ 5.0 THRU 170 VOLTS
|
http://
Central Semiconductor, Corp.
Central Semiconductor Corp.
|
| CM450HA-5F |
Trench Gate Design Single IGBTMOD 450 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 450 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
