| PART |
Description |
Maker |
| K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S2816 |
128Mb E-die SDRAM Specification 128Mb的电子芯片内存规
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L80 |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70
Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control & 11 Analog Inputs 20-SOIC -40 to 125
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70
Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC 0 to 70
Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-SOIC 128MB DDR SDRAM
Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP 0 to 70 128MB DDR SDRAM
DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL 128MB DDR SDRAM
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SOIC 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL 128MB DDR SDRAM
DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 51Vz 5mA-Izt 0.0588 0.1uA-Ir 38 SOT-23 3K/REEL 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0 DDR SDRAM的规范版.0
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 128MB DDR SDRAM
128Mb DDR SDRAM 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0
128Mb DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
http://
|
| HYS64V1622 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16 |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk
128MB PC133 (3-3-3) 2-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 2-bank End-of-Life
|
INFINEON[Infineon Technologies AG]
|
| HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 |
128M(8Mx16) GDDR SDRAM
128M(4Mx32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| EM42AM1644RTA-5FE EM42AM1644RTA-6FE EM42AM1644RTA- |
Double DATA RATE SDRAM
128Mb (2M】4Bank】16) Double DATA RATE SDRAM
128Mb (2M隆驴4Bank隆驴16) Double DATA RATE SDRAM
128Mb (2M?4Bank?16) Double DATA RATE SDRAM
128Mb (2M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| EM488M1644VTA-55L |
128Mb SDRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HY5V22GF-H HY5V22GF-P |
SDRAM - 128Mb
|
Hynix Semiconductor
|
