| PART |
Description |
Maker |
| KDV1430 KDV1430A KDV1430B KDV1430C KDV1430D |
Silicon diode for FM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| 1N4148D2B-JQRS.GRPC 1N4148D2A |
0.2 A, 75 V, SILICON, SIGNAL DIODE HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN
SILICON EPITAXIAL PLANAR DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| DSEP60-06A DSEP60-06AT |
HiPerFREDTM Epitaxial Diode with soft recovery 60 A, 600 V, SILICON, RECTIFIER DIODE, TO-268AA
HiPerFREDTM Epitaxial Diode with soft recovery 60 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AD
Fast Recovery Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| DSEC29-02A DSEC29-02AS |
HiPerFRED Epitaxial Diode with common cathode and soft recovery 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with common cathode and soft recovery 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
Fast Recovery Diodes
|
IXYS, Corp.
IXYS Corporation
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| 1N4148CSM |
SILICON EPITAXIAL PLANAR DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| U20GL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| KDV269E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| DSEE8-06CC |
HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二极管) 10 A, 300 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
|
