| PART |
Description |
Maker |
| MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0906 MGF0906B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL810IQ-4C |
L-Band High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| FLL21E090IY |
L,S-band High Power GaAs FET 升，S波段高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLU35XM |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET
|
Fujitsu Media Devices Limited
|
| FLL300IL-1 FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLU35ZMNBSP FLU35ZM |
L-Band Medium & High Power GaAs FET
From old datasheet system
|
List of Unclassifed Manufacturers
ETC
|
