| PART |
Description |
Maker |
| W24LO1ST |
LOW POWER & NORMAL SRAM 128Kx8
|
Winbond Electronics
|
| N01L0818L1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NanoAmp Solutions
|
| AS7C31024A-10JC AS7C31024A-10JI AS7C31024A-10TC AS |
3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)(3.3V 128KX8 CMOS 静态RAM（改进的引脚
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout)
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
|
Alliance Semiconductor Corporation
ETC
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| DPS128M8XXX |
128kx8 High Speed CMOS SRAM
|
Dense-Pac Microsystems
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| EDI88130CSXNB EDI88130CSXCB EDI88130CSXTM EDI88130 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
http://
White Electronic Design...
|
| EDI88128CDXCC EDI88128CDXCM EDI88128CDXFC EDI88128 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| K6X1008C2D-TQ55 K6X1008C2D-BF55 K6X1008C2D-GF55 K6 |
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KAQW614 |
SSR MOSFET Output, Normal Close Normal Open Type
|
Cosmo Electronics
|
