| PART |
Description |
Maker |
| EL5133IW-T7A EL5133IW-T7 |
670MHz Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
| 5962-0623601QPC 5962-0623602QPC |
(5962-0623601QPC / 5962-0623602QPC) 670MHz Low Noise Amplifiers
|
Intersil Corporation
|
| M5238AFP M5238AL M5238AP M5238P M5238FP |
DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS 双路低噪声J - FET输入运算放大
DUAL LOW NOISE JFET INPUT OPERATIONAL AMPLIFIERS
CRYSTAL 30.000 MHZ 10PF SMD 双低噪声JFET输入运算放大
Dual Low Noise J-Fet Input Operational Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| OP1177 OP1177AR OP1177ARM OP4177 OP4177AR OP4177AR |
Precision, Single, Low Noise Low Input Bias Current Operational Amplifiers
Precision Low Noise, Low Input Bias Current Operational Amplifiers
Precision Low Noise Low Input Bias Current Operational Amplifiers
From old datasheet system
|
AD[Analog Devices]
|
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| BFG193 Q62702-F1291 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
SIEMENS[Siemens Semiconductor Group]
http://
|
| 2SA1316 |
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER/ RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS
|
SMSC, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| HA4-5112883 HA-5104 |
Dual and Quad/ 8MHz and 60MHz/ Low Noise Operational Amplifiers
Dual/ Low Noise/ High Performance Uncompensated Operational Amplifier
|
Intersil Corporation
|
| Q62702-F1494 BFR280W |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BFS480 Q62702-F1531 |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| AD8663ACPZ-R7 AD8663 AD8663ACPZ-R2 AD8663ACPZ-RL A |
16V, 180μA Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
16V, 180レA Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
16V, 180A Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
|
Analog Devices
AD
|
