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GB10RF120K - 1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package

GB10RF120K_5045585.PDF Datasheet


 Full text search : 1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package
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PART Description Maker
X9119TV14 X9119TV14-2.7 X9119TV14I X9119TV14I-2.7 IGBT MODULE, 1200V, 54A; Transistor type:IGBT4; Current, Ic continuous a max:56A; Voltage, Vce sat max:2.05V; Case style:MiniSkiiP 2 ; Current, Ic continuous b max:45A; Time, rise:35ns; Voltage, Vce sat typ:1.85V; Voltage, RoHS Compliant: Yes
Single Supply/Low Power/1024-Tap/2-Wire Bus
INTERSIL[Intersil Corporation]
NCE20G120T 1200V, 20A, Trench NPT IGBT
Wuxi NCE Power Semiconductor Co., Ltd
2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low Vce(sat) Transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) Transistor(低VCE(sat)晶体
Low Vce(sat) Transistor (-20V/ -3A)
ROHM[Rohm]
Rohm CO.,LTD.
APT13GP120K Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon):3.6V的身份证(续):一三安培|超快IGBT的家
Commonwealth Industrial, Corp.
IRG4PH50K INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
IRF[International Rectifier]
2SB118410 2SB1184TLR 2SB1243TV2Q Power Transistor (-60V, -3A)
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
Rohm
IRG4PC40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
IRF[International Rectifier]
2SB1424 Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
TY Semiconductor Co., Ltd
2SD1615 World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
TY Semiconductor Co., Ltd
2SD1615A World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
TY Semiconductor Co., Ltd
ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
 
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