| PART |
Description |
Maker |
| T-997 |
DDS Aplications Pulse Transformers
|
Rhombus Industries Inc.
|
| T-910-5 |
DDS Application Pulse Transformer
|
Rhombus Industries Inc.
|
| T-998NC |
DDS Aplications Pulse Transformers
|
Rhombus Industries Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 2SB907 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
|
TOSHIBA
|
| 2SB908 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
|
TOSHIBA
|
| 2SD1224 |
Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
|
TOSHIBA
|
| 2SD2257 E001172 |
NPN EPITAXIAL TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
|
Toshiba Semiconductor
|
| B43415A3668A000 B43415A9108A000 B43416A8128A000 |
Capacitors for pulse applications with snap-in and solder lug terminals 为单元脉冲电容器的应用在终端和焊接片
|
EPCOS AG
SIEMENS AG
|
| PE-65502X PE-62252A PE-5163X PE-5160X PE-65457 PE- |
LONG BBL 2瓦特脉冲静电屏蔽00毫瓦的脉冲，射频脉冲和控制变压器
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers 2瓦特脉冲静电屏蔽00毫瓦的脉冲，射频脉冲和控制变压器
POT 20K OHM 9MM HORZ MET BUSHING
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
|
