| PART |
Description |
Maker |
| MGF0919A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0918A MGF0918A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0921A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| FLL810IQ-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
