| PART |
Description |
Maker |
| BSS123 BSS123-T |
150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel TrenchMOS(TM) transistor Logic Level FET
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor
|
Philips
NXP Semiconductors
|
| 2SK30A-R 2SK30A-Y 2N4303 2N3686A 2N5717 2N5718 2SK |
TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-72
TRANSISTOR | JFET | N-CHANNEL | 800UA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 15MA I(DSS) | TO-106 晶体管|场效应| N沟道| 30V的五（巴西）直| 15mA的我（直）|106
|
EPCOS AG
|
| MHT8P20 MTP3N12 VN2410B |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-258AA
TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 700MA I(D) | TO-39 晶体管| MOSFET的| N沟道| 240伏五（巴西）直| 700mA的一d）| TO - 39封装
|
Microchip Technology, Inc.
|
| NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管（漏电.7A, 漏源电压60V，导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| STM322 STM420 STM423 STM323 STM421 STM353 STM430 S |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-204AA
USB Port Lithium-Ion/Polymer Battery Charger
2A Lithium-Ion/Polymer Battery Charger
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-204AA
NanoPower Voltage Detectors
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-204AA
1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-3 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 11A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 350V五（巴西）直| 2.8AI（四）|04AA
|
Atmel, Corp.
|
| PHX9NQ20T PHF9NQ20 PHF9NQ20T PHX9NQ20T127 |
N-channel TrenchMOS(TM) transistor
N-channel TrenchMOS transistor
5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, FPAK-3
|
Philips
NXP Semiconductors N.V.
|
| NDT451AN NDT451 NDT451ANJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223
N-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| NDT452 NDT452AP NDT452APJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| NDT3055J23Z NDT3055NL |
N-Channel Enhancement Mode Field Effect Transistor
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223
|
Fairchild Semiconductor
|
| NDT410EL NDT410ELJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| MPF111 MPF112 MPF110 TP3329 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | P-CHANNEL | 3MA I(DSS) | TO-92 晶体管|场效应| P通道| 3mA的我（直）|92
|
Electronic Theatre Controls, Inc.
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
