| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SC3030 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
| 2SK579 2SK579L 2SK579S 2SK580 2SK580L 2SK580S |
HIGH SPEED POWER SWITCHING
(2SK579 / 2SK580) HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| 1SS389 E000306 |
DIODE (HIGH SEPPD SWITCHING APPLICATION)
From old datasheet system
HIGH SPEED SWITCHING APPLICATION
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SC3549 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING
|
Fuji Electric
Toshiba Semiconductor
|
| IKP20N65H5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| IKP08N65F5 IKP08N65F5-15 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| 2SJ189 2SJ189TP-FA |
Very High-Speed Switching Applications
4 A, 30 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| RJL6020DPK10 RJL6020DPK RJL6020DPK-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S2DPP-E0 RJK60S2DPP-E0T2 |
600V - 10A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HSM226S06 HSM226S |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching)
|
Siemens Semiconductor G...
|
