| PART |
Description |
Maker |
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| RF3198SB RF3198PCBA-41X RF3198 |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
DUAL-BAND GSM900/DCS POWER AMP MODULE
|
RF MICRO DEVICES INC
|
| MHVIC910HNR2 |
960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit Documentation
921 MHz-960 MHz SiFET RF Integrated Power Amplifier
|
MOTOROLA
|
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| CMM0335-AK-000T CMM0335 CMM0335-AK |
890 to 915 MHz 6V, 35 dBm, GSM Power Amplifier 89015兆赫6V的，35 dBm时的GSM功率放大
From old datasheet system
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
CELERITEK
|
| CGY98 |
GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V)
GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM/AMPS or PCN Operating voltage range: 2.7 to 5.0 V)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
|
Mini-Circuits
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| AWB7222P9 AWB7222P8 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
