| PART |
Description |
Maker |
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| IRGPC50K |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 52A I(C) | TO-247AC
|
|
| SGW15N120 |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
|
Infineon
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084
30V N-Channel PowerTrench MOSFET
|
|
| F8A06FF |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220VAR 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）|20VAR
|
Glenair, Inc.
|
| HGT1S1N120CNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 6.2AI（丙）|63AB
|
Intersil, Corp.
|
| IXGH40N30BD1S |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 60A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 300V五（巴西）国际消费电子展|0A条（c）的|47SMD
|
IXYS, Corp.
|
| IXSK40N60BD1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-264AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 75A条一（c）|64AA
|
IXYS, Corp.
|
| IXSH35N100 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 35A条一（c）|采用TO - 247AD
|
PerkinElmer, Inc.
|
| HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|7A一（c）|63AB
14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp.
Fairchild Semiconductor
|
