| PART |
Description |
Maker |
| MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MAMDES0010 |
E-Series I/Q Modulator 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| MAFR-000086-PS1C1T |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| XD010-24S-D2F |
1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier
|
sirenza.com
SIRENZA MICRODEVICES
|
| MHL19926 |
1930–1990 MHz, 10 W, 29.4 dB PCS Band RF Linear LDMOS Amplifier
|
Motorola
|
| 1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
LEM
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MHW1915D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived
|
Motorola
|
| PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
| PTFA191001E PTFA191001F |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| 1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
