| PART |
Description |
Maker |
| MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-11RG1 11RG1 |
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE 砷化镓角度看包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| IR333 GB-IR333C51C GB-IR333A21BT GB-IR333A21C GB-I |
HIGH POWER SOLUTION INFRARED EMITTING DIODES
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| MIE-404L3 |
GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-544L3 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-544H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL510009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL7400 TSAL740009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
http://
|
| TSAL6400 TSAL640009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| MIE-114H4 |
AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| VSML3710-GS08 VSML3710-GS18 VSML371009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
