| PART |
Description |
Maker |
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN
Complementary Silicon Power Transistors
Power 10A 250V Discrete PNP
|
ON Semiconductor
|
| 10TQ045S 10TQ040S 10TQ030S 10TQ035 10TQ 10TQ045 10 |
SCHOTTKY RECTIFIER 肖特基整流器
35V 10A Schottky Discrete Diode in a D2-Pak package 35V0A条肖特基二极管的分立的一D2 - PAK封装
40V 10A Schottky Discrete Diode in a D2-Pak package
35V 10A Schottky Discrete Diode in a TO-220AC package
45V 10A Schottky Discrete Diode in a TO-220AC package
45V 10A Schottky Discrete Diode in a D2-Pak package
|
International Rectifier, Corp.
SIEMENS AG
IRF[International Rectifier]
|
| RFD16N06LESM RFD16N06LESM9A |
Discrete Commercial N-Channel Power MOSFET, 60V, 16A, 0.047 Ohms @ VGS = 4.5V, TO-252/DPAK Package
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJE2955A MJE3055A |
Complementary Silicon power transistors (10A / 60V / 75W)
|
Nell Semiconductor Co., Ltd
Nell Semiconductor Co.,...
|
| MP6801 |
TRANSISTOR,MOSFET POWER MODULE,3-PH BRIDGE,60V V(BR)DSS,10A I(D)
From old datasheet system
|
Toshiba.
|
| 2N4399 |
PNP Silicon High-Power Transistor(60V（集电极-发射极）硅PNP大功率晶体管) 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| STB20NE06LT4 STB20NE06L |
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
THERMISTOR, PTC 2.50 OHM .10A 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|63AB
|
ST Microelectronics
ON Semiconductor
|
| 2N5684 |
Power 50A 80V Discrete PNP
|
ON Semiconductor
|
| 2SB834 2SB834O 2SB834Y |
POWER TRANSISTORS(3.0A,60V,30W)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
MOSPEC[Mospec Semiconductor]
MOSPEC SEMICONDUCTOR CORP.
Mospec Semiconductor, Corp.
|
