| PART |
Description |
Maker |
| M2V56S40AKT-7 M2V56S40AKT-6 M2V56S20AKT-7 M2V56S20 |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V56S20AKT-6 M2V56S20AKT-5 |
256M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V56S20ATP-8 M2V56S30ATP-8 M2V56S40ATP-8 |
256M Synchronous DRAM 256M同步DRAM
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
|
| M2V56S40TP M2V56S20TP-6 M2V56S20TP M2V56S20 |
256M Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EM6GE16EWXC EM6GE16EWXC-12H |
256M x 16 bit DDR3 Synchronous DRAM
|
EtronTech
|
| M2S56D20ATP M2V56D30ATP-10 M2V56D30ATP-75 M2V56D30 |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semicon...
|
| HYB39S256160CT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| M2S56D20TP-75 M2V56D30TP-75 M2V56D20TP-75 M2S56D30 |
128 x 64 pixel format, LED Backlight available
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66
256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
