| PART |
Description |
Maker |
| W29GL032CT7A W29GL032CT7B W29GL032CT7S W29GL032CB7 |
32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| AT49LV321 AT49BV320 AT49BV321 AT49LV320 |
32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory
32M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Single Plane. Bottom Boot
32M bit. 3.0-Volt Read and 3.0-Volt Byte-Write Sectored Flash. Single Plane. Bottom Boot
|
ATMEL Corporation
|
| AD8582ARZ |
5 Volt, Parallel Input Complete Dual 12-Bit DAC DUAL, PARALLEL, WORD INPUT LOADING, 16 us SETTLING TIME, 12-BIT DAC, PDSO24
|
Analog Devices, Inc.
|
| S70WS512N00BAWA20 S70WS512N00BAWAA3 S70WS512N00BFW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION[SPANSION]
|
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| IBM13M32734BCD |
32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2组寄缓冲同步动态RAM模块) 32M × 72配置2，银行注缓冲内存模组2M × 72配置2组寄缓冲同步动态内存模块）
|
IBM Microeletronics
International Business Machines, Corp.
|
| S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品（MCP）的512兆位2兆16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
|
| KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| V54C3128404VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic Corp
|
