| PART |
Description |
Maker |
| Q68000-A8000 IRL81 IRL81A |
From old datasheet system
GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter
ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% 发动 Infrarot - Sendediode GaAlA红外发射
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IRC-PC151 IRC-PC21 IRC-PC301 |
Infrarot-Temperatur-Messgerat
|
ASM GmbH
|
| OS150-2USB |
PC-konfigurierbarer Infrarot-Temperatursensor
|
Omega
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| TG2206F |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| SBB-5089Z SBB-5089 |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
http://
ETC[ETC]
|
| Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
