| PART |
Description |
Maker |
| STB160NF03L 7460 |
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET POWER MOSFET
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFETPOWER MOSFET N沟道30V 0.0021ohm - 160A章采用D2PAK STripFET⑩功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STB185N55F3 STP185N55F3 |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel 55V - 3.2m楼? - 120A - D2PAK/TO-220 STripFET垄芒 Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET?/a> Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET Power MOSFET
N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| D25SB60 D25SB10 D25SB80 D25SB100 D25SB20 D25SB40 |
Maximum Ratings & Thermal Characteristics Ratings at 25?/a> ambient temperature unless otherwise specified.
MAXIMUM RATINGS & THERMAL CHARACTERISTICS RATINGS AT 25∩ AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.
Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.
|
LRC[Leshan Radio Company]
|
| STV160NF02L |
N - CHANNEL 20V - 0.0016W - 160A - PowerSO-10 STripFET MOSFET
N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STP210NF02 STB210NF02-1 STB210NF02 8543 STB210NF02 |
N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFETII POWER MOSFET
N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET?/a> II POWER MOSFET
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
From old datasheet system
N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFET⑩ II POWER MOSFET
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 129NQ150R 129NQ 129NQ135 129NQ135R 129NQ150 |
150V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
150V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
135V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
135V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| STP130NH02L STP130NH02L07 |
N-channel 24V - 0.0034Ω - 120A - TO-220 STripFET Power MOSFET for DC-DC conversion
N-channel 24V - 0.0034ヘ - 120A - TO-220 STripFET⑩ Power MOSFET for DC-DC conversion
|
STMicroelectronics
|
| STV160NF02LA STV160NF02LAT4 |
N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET
N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET
N-CHANNEL 20V - 0.0018W - 160A PowerSO-10 STripFET TM POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STV160NF03LA STV160NF03LAT4 |
N-CHANNEL 30V 0.0021 OHM 160A POWERSO-10 STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0021 OHM 160A POWERSO-10 STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0021OHM - 160A PowerSO-10 STripFET TM POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRLP3803 |
HEXFET? Power MOSFET(VDSS = 30V,RDS(on) = 0.006Ohm,ID = 120A)
HEXFET㈢ Power MOSFET(VDSS = 30V,RDS(on) = 0.006Ohm,ID = 120A)
|
IRF[International Rectifier]
|
| FSTI16040 FSTI16045 FSTI16030 FSTI16035 FSTI16020 |
SCHOTTKY DIODES MODULE TYPE 160A
|
TRANSYS Electronics Limited
|
