| PART |
Description |
Maker |
| RA07M1317M RA07M1317M-01 RA07M1317M-E01 |
135-175MHz 6.5W 7.2V 2 Stage Amp. For PORTABLE RADIO
135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO
GIGATRUE 550 CAT6 PATCH 6 FT, NON BOOT, PURPLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RA07M1317MSA10 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H1317M-101 |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Sem...
|
| RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67781 M67781H |
135-160MHz / 12.5V / 40W / FM MOBILE RADIO
RF POWER MODULE 150-175MHz, 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| D1210UK D1210 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-175MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D1027UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应150W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
|
| D1004 D1004UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1017UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| MAL5104FB MAR5104CB |
4K X 1 STANDARD SRAM, 135 ns, CDFP24
4K X 1 STANDARD SRAM, 135 ns, CDIP18
|
|
