| PART |
Description |
Maker |
| KTA1073T |
EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER,CATHODE RAY TUBE BRIGHTNESS CONTROL)
EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL/ PLASMA DISPLAY/ NIXIE TUBE DRIVER/CATHODE RAY TUBE BRIGHTNESS CONTROL)
|
KEC Holdings
KEC(Korea Electronics)
|
| 2SC351504 |
HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| 2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| C9312SK-06 |
Flat panel sensor High-speed, High reliability, 110 kV (X-ray tube voltage) proof
|
Hamamatsu Photonics
|
| C0603X472K1GECAUTO |
Ceramic, Electro Static Discharge, ESD-FlexTerm-AUTO, 4700 pF, 10%, 100 V, 0603, C0G, SMD, MLCC, FT-CAP, Temperature Stable, Electro Static Discharge, Automotive Grade
|
Kemet Corporation
|
| C1206X104K3GECAUTO |
ESD SMD Auto C0G, Ceramic, Electro Static Discharge, 0.1 uF, 10%, 25 V, C0G, SMD, MLCC, Temperature Stable, Electro Static Discharge, Automotive Grade, 1206
|
Kemet Corporation
|
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| EG3013 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| XRS040N100 |
Portable X-Ray
|
VMI[Voltage Multipliers Inc.]
|
|
