| PART |
Description |
Maker |
| MSM27C201CZ |
262,144-Word x 8-Bit One Time PROM(256K字位一次性可编程ROM 262,144字8位一次性可编程56K字8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
| NM27C256NE100 |
262,144-Bit (32K x 8) High Performance CMOS EPROM 262,144位（32K的8）高性能CMOS存储
|
Fairchild Semiconductor, Corp.
|
| 1MC10-049-10 1MC10-049-15 1MC10-049-20 1MC10049 |
Thermoelectric Module
The MC10 is powered sub-series of large MC series of TE micro-modules. It consists of the following TEC types
|
RMT Ltd.
|
| 1MC10-071-10 1MC10-071-15 1MC10-071-20 1MC10071 |
Thermoelectric Module
The MC10 is powered sub-series of large MC series of TE micro-modules. It consists of the following TEC types
|
RMT Ltd.
|
| AK632256AWG-12 |
262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory 262,144 × 32位的CMOS / BiCMOS工艺静态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| MT18KSF25672PZ-1G4F1 |
256M X 72 DDR DRAM, DMA240 HALOGEN FREE, MO-269, RDIMM-240
|
STMicroelectronics N.V.
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| IXFT16N90Q IXFH16N90Q IXFK16N90Q |
HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 0698Q6300-02 0698Q6300-01 |
Quick Acting Radial Lead Micro Fuse Series
|
Bel Fuse Inc.
|
| STM3240G-ETH/NMF STM3240G-USB/NMF STM32F4-NETMF |
Microsoft .NET Micro Framework platform for STM32 F4 series
|
ST Microelectronics
|
| MRT80 MRT800 MRT630 MRT1 MRT1.25 MRT1.6 MRT100 MRT |
Time Lag Radial Lead Micro Fuse Series
|
http://
BEL[Bel Fuse Inc.]
|
| RST2 RST50 RST800 RST RST1 RST1.25 RST1.6 RST100 R |
Time Lag Radial Lead Micro Fuse Series
|
BEL[Bel Fuse Inc.]
|
