| PART |
Description |
Maker |
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
| STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND ST |
N-channel 600V - 0.37ヘ - 10A - FDmesh⑩ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37Ω - 10A - FDmesh?/a> II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37Ω - 10A - FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37楼? - 10A - FDmesh垄芒 II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
|
STMicroelectronics
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| SGW10N60 SGW10N60A SGB10N60A SGP10N60A |
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 10A 600V TO220AB IGBT
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 10A 600V TO247AC IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| AOWF10N60 AOW10N60 |
600V,10A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| AOT10N60 |
600V,10A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| IDT61298S25TC IDT61298S25TCB IDT61298S25L28B IDT61 |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM
x4 SRAM x4的SRAM
|
STMicroelectronics N.V.
Unisonic Technologies Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
TE Connectivity, Ltd.
|
| STW10NB60 |
N-CHANNEL 600V - 0.69 OHM - 10A - TO-247 POWERMESH MOSFET
|
ST Microelectronics
|
| 30PUB60 |
Miniature Power Relay, 1 Form C, 10A 250VAC 10A 125VAC, 6A 277VAC
DIODE - 3A 600V 27ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10ETS08FP 10ETS12FP 10ETS16FP |
Input Rectifier Diode(输入整流二极 输入整流二极管（输入整流二极管）
1600V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package 1600V 10A条性病。恢复二极管采用TO - 220伏交流电源全白（2引脚）封
800V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package 800V0A条性病。恢复二极管采用TO - 220伏交流电源全白（2引脚）封
1200V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
|
International Rectifier, Corp.
STMicroelectronics N.V.
Jiangsu Changjiang Electronics Technology Co., Ltd.
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
