| PART |
Description |
Maker |
| K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LTC2355-14 LTC2630 LTC2641 LT6200-10 LT6200-5 LT63 |
16-Bit, 2Msps, Pseudo-Differential Unipolar SAR
|
Linear Technology
|
| MAX11105AUT MAX11110AUT MAX11115AUT MAX11116AUT MA |
2Msps/3Msps, Low-Power, Serial 12-/10-/8-Bit ADCs
|
Maxim Integrated Products
|
| LTC2380HMS-16PBF LT6200 LT6200-10 LT6200-5 LTC2630 |
16-Bit, 2Msps, Low Power SAR ADC with 96dB SNR
|
Linear Technology
http://
|
| TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI |
524288 WORDS x 8BIT STATIC RAM
524,288 WORDS x 8BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 1402 LTC1402CGNTR LTC1402IGNTRPBF LTC1402CGNTRPBF |
Serial 12-Bit, 2.2Msps Sampling ADC with Shutdown; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 85°C 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO16
Serial 12-Bit, 2.2Msps Sampling ADC with Shutdown; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO16
Serial 12-Bit, 2.2Msps Sampling ADC with Shutdown
|
Linear Technology, Corp.
|
| LTC2321-12-15 |
Dual, 12-Bit Sign, 2Msps Differential Input ADC with Wide Input Common Mode Range
|
Linear Technology
|
| KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5756820CT HY5756820LT |
4 Banks x 8M x 8Bit Synchronous DRAM
|
Hynix Semiconductor
|
