| PART |
Description |
Maker |
| STD10NF10-1 STD10NF10T4 STD10NF10 D10NF10 |
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET?/a> II POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK LOW GATE CHARGE STRIPFET⒙ II POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| EN8987 SFT1345 SFT1345-TL-H SFT1345-H |
Power MOSFET -100V -11A 275m Ohm Pch Single TP/TP-FA
Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA
|
ON Semiconductor
|
| STD16NF25 STP16NF25 STF16NF25 |
N-channel 250V - 0.195ヘ - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ II Power MOSFET
N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET
N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET?/a> II Power MOSFET
N-channel 250V - 0.195楼? - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET垄芒 II Power MOSFET
|
http://
STMicroelectronics
|
| IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.077ohm，身份证\u003d 28A条）
Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A)
Hexfet? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF7452 IRF7452TR |
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)
|
IRF[International Rectifier]
|
| FX6ASJ-06 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE 6 A, 60 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| STH13NB60FI STH13NB60 STW13NB60 |
N-CHANNEL Power MOS MOSFET
N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
N - CHANNEL 600V - 0.48W - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| 13N40L-TF3-T 13N40G-TF3-T |
13A, 400V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
