| PART |
Description |
Maker |
| BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
AVALANCHE DIODE SOD57 STD-E2
Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
| BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode
Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD4110 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD91V10 |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD91V |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMHD7006 |
SMD Switching Diode Single: High Voltage
SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
