| PART |
Description |
Maker |
| 2N3094 |
SCR, V(DRM) = 900V TO 999.9 V
|
New Jersey Semi-Conductor Products, Inc.
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|02 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202
|
Analog Devices, Inc. HIROSE ELECTRIC Co., Ltd.
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc. Seme LAB
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR 1125 A, 1200 V, SCR, TO-200AB 1950 A, 800 V, SCR, TO-200AC 5087 A, 1600 V, SCR 5087 A, 1800 V, SCR 2749 A, 1800 V, SCR 2749 A, 800 V, SCR 2110 A, 3000 V, SCR 2749 A, 600 V, SCR 1895 A, 1000 V, SCR, TO-200AC 2268 A, 1200 V, SCR 5260 A, 1200 V, SCR 1690 A, 800 V, SCR, TO-200AC 2749 A, 1600 V, SCR 5260 A, 1600 V, SCR 2749 A, 1000 V, SCR 1765 A, 1200 V, SCR, TO-200AC 1765 A, 1600 V, SCR, TO-200AC 2749 A, 1200 V, SCR 2749 A, 400 V, SCR 1030 A, 800 V, SCR, TO-200AB 1715 A, 600 V, SCR, TO-200AC 3140 A, 600 V, SCR 2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
|
| N0676YS120-180 N0782YS120-160 N0992YS020-060 N0734 |
1346 A, 1800 V, SCR 1554 A, 1600 V, SCR 1995 A, 600 V, SCR 1465 A, 1600 V, SCR 1201 A, 2400 V, SCR
|
Westcode Semiconductors, Ltd.
|
| C49Z-A1B2C4150-FREQD16 C49Z-A1B1C350-FREQD16 C49Z- |
QUARTZ CRYSTAL RESONATOR, 3.6 MHz - 3.899 MHz QUARTZ CRYSTAL RESONATOR, 6 MHz - 6.999 MHz QUARTZ CRYSTAL RESONATOR, 7 MHz - 7.999 MHz QUARTZ CRYSTAL RESONATOR, 30 MHz - 74.999 MHz QUARTZ CRYSTAL RESONATOR, 1.8432 MHz - 1.999 MHz QUARTZ CRYSTAL RESONATOR, 4.1 MHz - 4.999 MHz QUARTZ CRYSTAL RESONATOR, 75 MHz - 119.999 MHz QUARTZ CRYSTAL RESONATOR, 120 MHz - 150 MHz QUARTZ CRYSTAL RESONATOR, 3.2 MHz - 3.499 MHz QUARTZ CRYSTAL RESONATOR, 2.4 MHz - 2.999 MHz QUARTZ CRYSTAL RESONATOR, 2 MHz - 2.399 MHz QUARTZ CRYSTAL RESONATOR, 5 MHz - 5.999 MHz QUARTZ CRYSTAL RESONATOR, 4 MHz - 4.099 MHz QUARTZ CRYSTAL RESONATOR, 24 MHz - 29.999 MHz QUARTZ CRYSTAL RESONATOR, 3.5 MHz - 3.599 MHz QUARTZ CRYSTAL RESONATOR, 3 MHz - 3.199 MHz QUARTZ CRYSTAL RESONATOR, 13 MHz - 32.768 MHz
|
Cardinal Components, Inc. CARDINAL COMPONENTS INC
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5 100 A, 800 V, SCR 120 A, 1100 V, SCR 120 A, 1200 V, SCR 120 A, 1300 V, SCR 120 A, 1000 V, SCR
|
|
| VSKT25016PBF VSKT17016PBF |
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A
|
Vishay Siliconix
|
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8 A, 400 V, SCR, TO-92 0.8 A, 600 V, SCR, TO-92 0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| QEHC49H3110LT5016 QEHC49H3130LT5016 QEHC49H3150LT5 |
HC49U Crystal - Through Hole packaged QUARTZ CRYSTAL RESONATOR, 8 MHz - 12.999 MHz ROHS COMPLIANT PACKAGE-2 QUARTZ CRYSTAL RESONATOR, 13 MHz - 35 MHz QUARTZ CRYSTAL RESONATOR, 3.5 MHz - 3.999 MHz QUARTZ CRYSTAL RESONATOR, 5 MHz - 5.999 MHz QUARTZ CRYSTAL RESONATOR, 3 MHz - 3.499 MHz QUARTZ CRYSTAL RESONATOR, 80 MHz - 125 MHz QUARTZ CRYSTAL RESONATOR, 6 MHz - 7.9999 MHz QUARTZ CRYSTAL RESONATOR, 2 MHz - 2.999 MHz QUARTZ CRYSTAL RESONATOR, 4 MHz - 4.999 MHz QUARTZ CRYSTAL RESONATOR, 1.8432 MHz - 1.999 MHz HC49U Crystal - Through Hole packaged
|
http:// Rakon France SAS TEMEX COMPONENTS
|
| IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
|