| PART |
Description |
Maker |
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| RJK0348DPA10 RJK0348DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
50 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HAT2192WP-EL-E HAT2192WP-15 |
10 A, 250 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| 2SK2903 2SK2903-01MR |
N-CHANNEL SILICON POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET 50 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| MIC501305 MIC5013YM |
IC DRIVER MOSF HI/LO SIDE 8SOIC BUF OR INV BASED MOSFET DRIVER, PDSO8
Protected High- or Low-Side MOSFET Driver
|
Micrel Semiconductor, Inc.
|
| RJE0605JPD RJE0605JPD-00-J3 RJE0605JPD-15 |
Silicon P Channel MOS FET Series Power Switching
10 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET SC-63, DPAK(S), 3 PIN
|
Renesas Electronics Corporation
|
| RJK6006DPD RJK6006DPD-00-J2 RJK6006DPD-15 |
Silicon N Channel MOS FET High Speed Power Switching
5 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET MP-3A, SC-63, 3 PIN
|
Renesas Electronics Corporation
|
| RJE0615JSP RJE0615JSP-00-J3 |
Silicon P Channel MOS FET Series Power Switching
10 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
|
Renesas Electronics Corporation
|
|
