| PART |
Description |
Maker |
| MB85396A-60 MB85396A-70 |
CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36同步动态RAM) 4米36Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS分36位同步动态RAM）的
|
Fujitsu, Ltd.
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| HYS72V8200GR-8-E HYS72V16200GR-8-E HYS72V16201GR-8 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
内存| 32MX72 |CMOS |内存| 168线|塑料
SDRAM|16MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|8MX72|CMOS|DIMM|168PIN|PLASTIC
|
INFINEON TECHNOLOGIES AG
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| GM72V66841 GM72V66841ET GM72V66841ELT-75 GM72V6684 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
From old datasheet system
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
x8 SDRAM x8 SDRAM内存
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HYM72V64C736BLT4-H HYM72V64C736BLT4-K |
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM - Registered DIMM 512MB
|
Hynix Semiconductor
|
| MB8502S064AD-100 MB8502S064AD-84 |
CMOS 2M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 2M×64 位同步位动态RAM)
|
Fujitsu Limited
|
| MB8501S064AE-100 MB8501S064AE-84 MB8501S064AE-67 |
CMOS 1M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64同步动态RAM)
|
Fujitsu Limited
|
| EBD25RB4ALFB EBD25RB4ALFB-1A EBD25RB4ALFB-75 EBD25 |
256MB Registered DDR SDRAM DIMM
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC
|
Elpida Memory
|
| KM416S4020A |
CMOS SDRAM
|
Samsung Electronics
|
