| PART |
Description |
Maker |
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| TIP29D TIP29E TIP29F |
TRANS 10V 5W SA10C BIPOLAR GCI
NPN SILICON POWER TRANSISTORS
|
Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
|
| 1N5338B 1N5352B 1N5374B 1N5372B 1N5375B 1N5378B 1N |
SILICON 5 WATT ZENER DIODES
DIODE VAR CAP 42PF 1A SOT-23
TRANSISTOR NPN 160V 4000MA TO92
Zener Voltage Regulator Diode
MOSFET P-CH 100V 140MA TO-92
MOSFET P-CH 200V 120MA TO-92
DIODE SCHOTTKY 40V 0.5A SOT-23
TRANS NPN HG 25V 2000MA TO-92
TRANS NPN HG 45V 2000MA TO-92
MOSFET N-CH 60V 600MA TO-92
MOSFET N-CH 100V 900MA TO-92
PT 1.5/14-5.0-V
IC REF VOLT 2.45V 3% 8-SOIC
IC REG LDO MICROPWR 2.8V SOT23-5
MOSFET N-CH 250V 240MA SOT-89
IC REF VOLT FIX 2.5V 3% SOT-23
IC REF VOLT FIX 2.5V 3% 8-SOIC
CTRLR FAN MOTOR 2-PH ROTOR LOCK
TRANS/SCHOTTKY PNP DL 3X2MM MLP
TRANS NPN HG 120V 500MA TO-92
CAP 0.5PF 50V /-0.10PF NP0(C0G) SMD-0603 TR-7-PA SN-NIBAR 瓦齐纳二极管
TRANS SW NPN 450V 150MA SOT-23 4.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 51 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 12 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
NPN BJT TRANSISTOR 5.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 17 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 7.5 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 表面贴装硅稳压二极管
TRANSISTOR NPN 40V 5000MA TO92 60 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 4.7 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
TRANS PNP -60V -4000MA TO-92 91 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 130 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 13 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
IC, REFERENCE VOLTAGE, 2.5V, 1%, ZR4040, SOT 23 PKG 28 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 30 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
IC SHUNT REG ADJ PREC 1% SOT-23 56 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
TRANSISTOR, SILICON NPN, 30V, 1A, SOT-223 11 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 4.7UF 16V 10% TANT SOLID RAD-.10 B-CASE DIPPED BULK SN100 瓦齐纳二极管
surface mount silicon Zener diodes 9.1 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAPACITOR TANT .15UF 35V 10% RAD 瓦齐纳二极管
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:0.022uF; Capacitance Tolerance: /- 20%; Voltage Rating:100VDC; Capacitor Dielectric Material:Multilayer Ceramic; Termination:Axial Leaded RoHS Compliant: Yes 瓦齐纳二极管
XSTR-PNP GP-40V SMT 3.9 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
TRANS PNP HV -400V -200MA TO-92 68 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 160 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE VARACTOR 25V HYPER SOD-323 22 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 1UF 35V 10% TANT SOLID RAD-.25 A-CASE DIPPED BULK STANDOFF 瓦齐纳二极管
TRANSISTOR, SILICON PNP, 30V, 500MA, SOT-23 5.1 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MOSFET N-CH 200V 180MA TO-92 150 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 14 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 27 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
TRANS NPN HV 300V 500MA TO-92 75 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 8.7 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 3.9 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE VAR CAP 33PF 25V SOD-323
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
Electronics Industry Public Company Limited
Motorola Mobility Holdings, Inc.
MICROSEMI CORP-SCOTTSDALE
|
| P-5016 P-6134 P-6467 P-6456 P-6138 P-6466 P-6469 P |
POWER TRANS FORMERS
|
List of Unclassifed Man...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| FOD0708 |
Optocouplers consist of an AlGaAs LED optically coupled to a high speed trans-impedance amplifier and voltage comparator
|
FAIRCHILD
|
| IRFF212 IRFF213 |
RELD EFFECT POWER TRANSISTOR
Trans MOSFET N-CH 150V 7.5A 3-Pin TO-39
|
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| BLS2731-110 BLS2731110T |
TRANS GP BJT NPN 75V 3SOT-423A
Microwave power transistor
|
Philips Semiconductors / NXP Semiconductors
|
| 2SK1938 2SK1938-01R |
TRANS PREBIASED PNP 200MW SOT23
Power MOSFET
From old datasheet system
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| MMBR571L |
Silicon NPN RF Transistor
Trans GP BJT NPN 10V 0.08A 3-Pin SOT-23 T/R
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
|
|
