| PART |
Description |
Maker |
| KMA2D7DP20X |
TSOP-6 PACKAGE
|
KEC(Korea Electronics)
|
| IRF5810TR |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
|
International Rectifier
|
| MX23L12811-1 MX23L12811RC-10 MX23L12811RC-12 MX23L |
NEW 128M-BIT (16M x 8 / 8M x 16) MASK ROM WITH PAGE MODE(TSOP PACKAGE)
|
PROM
MCNIX[Macronix International]
|
| IRFTS9342 IRFTS9342TRPBF |
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| IRF5801 IRF5801TR |
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| IRF5804TR |
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| IRF5805 IRF5805TR |
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| IRLMS5703 IRLMS5703TR |
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4 |
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| V54C3256164VAT V54C3256164VBT V54C3256404VB V54C32 |
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| CY14E104M-ZS20XI CY14E104K-ZS25XCT CY14E104M-ZS25X |
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 45 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
|
Cypress Semiconductor, Corp.
|
